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RAP opportunity at National Institute of Standards and Technology     NIST

Metrology for Semiconductor Manufacturing

Location

Physical Measurement Laboratory, Sensor Science Division

opportunity location
50.68.51.B7534 Gaithersburg, MD

NIST only participates in the February and August reviews.

Advisers

name email phone
John H. Burnett john.burnett@nist.gov 301.975.2679
Thomas Avery Germer thomas.germer@nist.gov 301.975.2876
Steven E. Grantham grantham@nist.gov 301.975.5528
Jay Howard Hendricks jay.hendricks@nist.gov 202 740 8633
Heather Jean Patrick heather.patrick@nist.gov 301.975.4684

Description

Research opportunities are available to develop and advance measurement methods required for current and future semiconductor manufacturing processes. Areas of particular interest include the following: (1) optical metrology for extreme ultraviolet (EUV) lithography with an emphasis on the optical properties of EUV materials and the quantification of surface damage due to EUV-induced chemical reactions involving residual vacuum gases, (2) determinations of the outgassing rate of water vapor and other molecules from surfaces, (3) development of holographic microscopy for critical defect inspection, (4) characterization of EUV sources and optics, (5) advancement of optical scatterometry for assessing surface contamination and critical dimensions, (6) accurate measurement of the linear and nonlinear properties of optical materials being considered for next-generation lithographic techniques, and (7) determination of the physical properties of important precursor gases used in semiconductor manufacturing.

 

key words
EUV lithography; Holographic microscopy; Extreme ultraviolet radiation; EUV damage; Optical scatterometry; Semiconductor manufacturing;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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