NRC Research Associate Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies

  sign inOpen Printer View

RAP opportunity at National Institute of Standards and Technology     NIST

Low-Dimensional Materials for Electronics, Photonics, Energy, and Sensors

Location

Material Measurement Laboratory, Materials Science and Engineering Division

opportunity location
50.64.21.B8344 Gaithersburg, MD

NIST only participates in the February and August reviews.

Advisers

name email phone
Albert Davydov albert.davydov@nist.gov 301.975.4916

Description

Low-dimensional electronic materials, including few-atoms thick 2D semiconductors, topological insulators and superconductors, have attracted considerable attention for potential application in nanoscale devices, including beyond-CMOS electronics, quantum computers, chemical sensors, photodetectors, etc. Prospective advantages over traditional thin-film devices include exceptional structural quality, high surface-to-volume ratio, bottom-up device engineering with high-density on-chip integration, and utilization of quantum size effects. In this project, we are developing metrology needed for the synthesis, processing, and characterization of low-dimensional materials to enable reliable nanoscale device development and manufacturing. We operate several chemical vapor transport and directional solidification reactors for scalable fabrication of transition metal dichalcogenides and other layered van-der-Waals materials. These fabrication tools are complemented by post-growth device assembly, nanoscale structural/electrical/optical measurements, and comprehensive multiscale & multiphysics material and device modeling under Material Genome Initiative. We are open to extending these approaches to new classes of quantum materials as guided by emerging technology needs.

We are interested in research topics related to the fabrication and scalable assembly of low-dimensional structures with controlled properties into functional devices and to the development of methods for correlating their structural, compositional, electrical, and optical properties to enable a broad range of electronic, photonic, and sensor applications, including for flexible/transparent electronics, beyond-CMOS logic and memory, quantum computing, etc. Excellent collaborative opportunities exist with staff in other NIST laboratories, as well as with other federal labs.

 

key words
Electronic materials; quantum materials; topological materials; low-dimensional semiconductors; 2D layers; transition metal dichalcogenides; crystal growth; electronics; chemical sensors; energy; beyond CMOS devices;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
Copyright © 2024. National Academy of Sciences. All rights reserved.Terms of Use and Privacy Policy