Opportunity at Naval Research Laboratory (NRL)
Nanoscale Characterization of Advanced Nitride Materials and Devices
Naval Research Laboratory, DC, Materials Science & Technology
||Washington, DC 203755321
|Bradley T De Gregorio
Ultra-wide bandgap semiconductor materials will be a base for next generation high power, high efficiency radio frequency amplifiers. At the forefront of this technology are high electron mobility transistor devices based on AlN and AlxGa1-xN. Using aberration-corrected scanning-transmission electron microscopy (STEM), our objective is to provide nanoscale characterization of the phases, interfaces, and defect microstructure of these advanced nitride phases, beginning with bulk materials and thin films, and eventually working RF devices. This work will primarily utilize a Nion UltraSTEM 200X at the U.S. Naval Research Laboratory, equipped with a wide-angle, windowless Bruker energy-dispersive X-ray spectrometer (EDS) and Gatan Enfinium electron energy-loss spectrometer (EELS) with a brand new MerlinEM direct electron detector for high-sensitivity plasmon and core-loss EELS. This project will make heavy use of a Thermo Fischer Helios G3 focused ion beam (FIB) instrument and Fischione NanoMill to produce high-quality samples for analysis.
Hickman A. L., et al. (2021) Next generation electronics on the ultrawide-bandgap aluminum nitride platform. Semiconductor Science and Technology 36, 044001 (12pp).
Tsao J. Y. et al. (2018) Ultrawide-bandgap semiconductors: Research opportunities and challenges. Advanced Electronic Materials 4, 1600501.
Transmission Electron Microscopy; Ultrawide Bandgap Semiconductors; Aluminum Nitride; Electron Energy Loss Spectroscopy; Functional Materials
Open to U.S. citizens and permanent residents
Open to Postdoctoral applicants