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Opportunity at Naval Research Laboratory (NRL)

Wide bandgap material and device characterization.

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

RO# Location
64.15.25.C0741 Washington, DC 203755321

Advisers

name email phone
Nadeemullah A Mahadik nadeem.mahadik@nrl.navy.mil 202-767-0490

Description

This program focuses on investigating materials defects that affect the operation of SiC and GaN power devices as well as the design and fabrication of novel wide bandgap devices. The materials defects being investigated include both point and extended defects. The emphasis of research into point defects concerns their effect on carrier lifetime and how that lifetime varies over the temperature, doping, and carrier concentration ranges encountered in ultra-high voltage SiC power devices. Extended defects are investigated using in-house High-resolution X-ray Topography (XRT) system, which is the only one of its kind at a research lab within the USA. Using this technique extended defects such as dislocations can be tracked on whole wafer level. Additionally, a novel ultraviolet photoluminescence (UVPL) imaging technique developed at NRL that enables non-destructive whole-wafer tracking of dislocations and other extended defects will be used. The research includes developing novel techniques to suppress dislocations, which cause detrimental effects in device electrical characteristics.

Keywords:
High power devices; Dislocations; Extended defects; Wide bandgap materials

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$89,834.00 $3,000.00
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