This position requires a highly motivated candidate with Ph.D. degree in one or more of the following areas: material science, solid-state physics, chemical engineering or electrical engineering. For this position, experience in one or more of the following is desirable:  semiconductor processing, AFM and associated scanning probe measurements, optical spectroscopy, SEM, Hall measurements, CV, epitaxial growth, and ALD. The position will focus on understanding and mitigating the impact of various point defects and other fabrication induced defects in SiC as it pertains to quantum networks using Si vacancies or divacancies. In addition, the candidate will fabricate photonic crystal waveguides and assist in evaluating their efficacy. As such, the candidate is expected to conduct a range of characterization experiments as well as to assist in coordinating other characterization experiments to enable long-lived quantum systems in photonic crystals and waveguides.

This position is part of a larger, team-oriented group focused on SiC epitaxial growth, graphene and 2-dimensional materials synthesis and associated characterization and device structures of various types.  There will be significant opportunities for cross-fertilization with these programs both inside and outside of NRL.