Chalcogenide phase change materials (PCMs; e.g., GeTe, GeSbTe) are seeing increased usage in a broad range of applications from electronic memory and RF electronic switches to switchable plasmonic metasurfaces and neuromorphics. As a result, there is a growing need in engineering these materials with properties and characteristics (e.g., increased crystalline conductivity, zero density differential phase change, low optical loss) to meet the performance demands of current and emerging applications in electronic and photonic technologies (e.g., reconfigurable electronics and metamaterials, energy scavenging technologies, neuromorphics).  The ideal candidate will have experience with sputter deposition systems and practices, as well as a strong material science/engineering background including modeling, analyzing, and characterizing thin films. Work is expected to be completed using a dedicated sputter deposition system, as well as basic fabrication (e.g., lithography, wet and dry etching, metal evaporation, etc.) and materials characterization (e.g., SEM, TEM, ellipsometry, Hall effect measurements, etc.) facilities located within the Division and at the NRL Nanoscience Institute.