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Opportunity at Naval Research Laboratory (NRL)

Chalcogenide Phase Change Material Engineering for Emerging Electronic and Optical Applications

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

RO# Location
64.15.25.C0440 Washington, DC 203755321

Advisers

name email phone
James Galloway Champlain james.champlain@nrl.navy.mil 202.404.4620

Description

Chalcogenide phase change materials (PCMs; e.g., GeTe, GeSbTe) are seeing increased usage in a broad range of applications from electronic memory and RF electronic switches to switchable plasmonic metasurfaces and neuromorphics. As a result, there is a growing need in engineering these materials with properties and characteristics (e.g., increased crystalline conductivity, zero density differential phase change, low optical loss) to meet the performance demands of current and emerging applications in electronic and photonic technologies (e.g., reconfigurable electronics and metamaterials, energy scavenging technologies, neuromorphics).  The ideal candidate will have experience with sputter deposition systems and practices, as well as a strong material science/engineering background including modeling, analyzing, and characterizing thin films. Work is expected to be completed using a dedicated sputter deposition system, as well as basic fabrication (e.g., lithography, wet and dry etching, metal evaporation, etc.) and materials characterization (e.g., SEM, TEM, ellipsometry, Hall effect measurements, etc.) facilities located within the Division and at the NRL Nanoscience Institute.

Keywords:
Phase Change Materials; PCMs; PCM; Chalcogenide; Materials Engineering; Electronics; Photonics

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$89,834.00 $3,000.00
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