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Opportunity at Naval Research Laboratory (NRL)

Materials Scientist in Atomic Layer Deposition (ALD)

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

RO# Location
64.15.25.C0405 Washington, DC 203755321

Advisers

name email phone
Hans S Cho hans.cho@nrl.navy.mil 202-767-0032

Description

Atomic Layer Deposition for Neuromorphic and Photonic Applications

Atomic layer deposition (ALD) is a key technique for depositing uniform, conformal thin film oxides and other materials necessary for nascent neuromorphic and photonic applications. Materials of interest include ALD-grown Mott-transition oxides (e.g., vanadium oxide, niobium oxide) and ternary oxide compounds for achieving tunable materials properties to support the development of integrated nanoscale electronic and optical devices. The ideal candidate will have extensive experience with ALD, as well as a strong materials science background for analyzing and characterizing electronic thin films. Work is expected to be completed using a dedicated ALD system, as well as device fabrication (lithography, RIE, etc.) and materials characterization facilities (e.g., XRD, XPS, XRR, AFM, SEM, etc.) located within the Division and at the NRL Nanoscience Institute.

Keywords:
atomic layer deposition; oxide memristors; neuromorphic computing devices;

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$89,834.00 $3,000.00
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