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Opportunity at Naval Research Laboratory (NRL)

Next-Generation Electronic Materials and Devices

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

RO# Location
64.15.25.B7928 Washington, DC 203755321

Advisers

name email phone
Travis James Anderson travis.anderson@nrl.navy.mil 202.404.5854

Description

Silicon-based transistors are rapidly approaching fundamental performance limits; therefore, next-generation computing and power switching needs require advanced high-performance devices based on novel electronic materials. To meet these requirements, graphene has been proposed for digital logic and wide-bandgap materials such as GaN, SiC, and Diamond have been proposed for power switching devices. This research opportunity will (1) study the fundamental switching mechanisms in graphene-based transistors, (2) develop high voltage III-N and Diamond power devices, and (3) investigate novel devices resulting from the integration of these materials, including graphene and diamond/lll-N heterojunctions.

 

References

Tadjer MJ, et al: IEEE Electron Device Letters 33: 23, 2012

Tadjer MJ, et al: Applied Physics Letters 193506: 2012

 

Keywords:
Graphene; Surface chemistry; Semiconductors; Electrochemistry; Ionic electronics;

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$87,198.00 $3,000.00
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