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Opportunity at Naval Research Laboratory (NRL)

Structural Characterization of Electronic Materials

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

RO# Location
64.15.25.B2840 Washington, DC 203755321

Advisers

name email phone
Mark E. Twigg mark.twigg@nrl.navy.mil 202.404.8543

Description

Using transmission electron microscopy (TEM), our objective is to structurally characterize electronic materials and the associated extended defects such as dislocations and stacking faults. Structures of particular interest include 4H-SiC, GaN/Ga1-x-yAlxInyAlN, and Si/Si1-xGex thin films. Nanoelectric materials (e.g., consisting of gold nanoclusters formed by DNA-mediated self-assembly) are also being studied. We are also analyzing silicon oxide layers in silicon, or grown directly on Si substrate. In addition, our research group is in charge of a Hitachi H-9000UHR high-resolution TEM (a top entry instrument with 0.19 nm resolution). Other accessible TEM instruments include a Philips CM30 equipped with thin-window-, energy-dispersive x-ray spectroscopy (EDXS), and a JEOL 2010 with a field emission source; Z-contrast scanning transmission electron microscopy imaging; EDXS; and electron energy loss spectroscopy analytical capabilities.

 

Keywords:
Compound semiconductors; Dislocations; Electronic properties; Extended defects; Gallium nitride; Nanoelectronics; Silicon carbide; Silicon-based materials; Stacking faults; Transmission electron microscopy; X-ray spectra;

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$87,198.00 $3,000.00
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