Opportunity at National Institute of Standards and Technology (NIST)
Broadband Nanoimaging of Optically Excited Free Carriers
Physical Measurement Laboratory, Applied Physics Division
Please note: This Agency only participates in the February and August reviews.
|T. Mitchell Wallis
The successful design and deployment of next-generation electronic and optoelectronic nanoscale devices will require a detailed understanding of the underlying electronic structure and the electronic response to external stimuli. We seek to understand nanoscale variations in conductivity by leveraging our existing capabilities in AFM-based microwave impedance microscopy (sMIM) to develop new imaging and metrological capabilities for studying nanoscale electronic properties. In particular, we are interested in combining time-resolved optical techniques with our microwave methods to study locally generated carriers and to study their decay and transport across heterointerfaces (p-n junctions, materials interfaces, etc). We seek a researcher to work with us to help develop new tools to study nanoscale electronic devices. Scanning probe and/or optics experience is preferred.
Microwave; Nanoscale; Scanning probe microscopy; Near-field optics;
Open to U.S. citizens
Open to Postdoctoral applicants