The Fundamental Electrical Measurements group within the Quantum Measurement Division is investigating graphene metrology towards two goals: (1) to develop near-room-temperature graphene quantum Hall devices and other possible quantum electrical standards, and (2) to bridge measurement length scales to advance graphene device technologies.

The development of quantum Hall devices involves precise and accurate measurements of graphene’s Hall and longitudinal resistance against existing GaAs quantum Hall standards as a function of charge carrier density, temperature, and applied magnetic field to determine the feasibility of using graphene as a metrological quantum resistance standard. Future electrical standard investigations may include the challenge of developing graphene metrology for Single Electron and Josephson voltage devices.

The development of multiscale methods to measure how the marcoscopic behavior of novel graphene devices arises from the microscopic distribution of nanoscale properties involves multiple NIST research efforts linking STM, STS, Raman, and macroscopic magneto-transport measurements.Initial investigations involve the characterization of the interface between graphene and substrates, metals and insulators, and the development of methods to fabricate and characterize test structures and devices incorporating graphene (single layer, bi-layer, and few layer) and stacked structures.

 

Keywords:

Condensed matter physics; Graphene; Magneto-transport; Quantum electrical standards; Quantum Hall effect; Fundamental constants;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants