We focus on the optical and electrical characterization of photovoltaic (PV) and advanced complementary metal oxide semiconductor (CMOS) materials. The materials of interest are the 2^nd and 3^rd PV thin films and advanced metal gates, and high-k dielectrics on high-mobility substrates. The main techniques used are Internal Photoemission (IPE), Vacuum-Ultraviolet Spectroscopic ellipsometry (VUV-SE), and various electro-optical measurements within the project. Other physical and chemical characterization tools are also available including XPS, AFM, Scanning Capacitance Probe, XRD, and IR spectroscopy. The research efforts also involve device fabrications at NIST’s Nanofab in collaboration with other researchers. The primary functions of the characterization are to combine those measurement tools to study electronic band alignments and quantum efficiencies of technologically important materials and structures for advanced CMOS devices and solar cells.

 

Keywords:

Ellipsometry; Internal photoemission; Metal gates; High-k dielectrics; CMOS; Solar cell; Photovoltaic;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants