Opportunity at National Institute of Standards and Technology (NIST)
Advanced New Memory Devices
Physical Measurement Laboratory, Nanoscale Device Characterization Division
||Gaithersburg, MD 20899
Please note: This Agency only participates in the February and August reviews.
|Kin P. Cheung
Modern society depends on information creation, transmission, storage, and manipulation. At the center of it all is memory. Computing technology is already memory bandwidth limited. Current memory technologies are running out of room for further improvement to meet the need of the information economy. Breakthrough in memory technology is a widely recognized need. We are working on new memory concepts to address this need. One of the candidates we are working on is a new polar polymer based analog memory technology that is both very high speed and very long retention. We aim for high-speed, high-density, high-endurance, non-volatile, low power and scalable. Our work involves physics, chemistry, and electrical engineering. We seek experimentalists with any of these back grounds.
Computing; Data center; Information; Storage;
Open to U.S. citizens
Open to Postdoctoral applicants