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Opportunity at National Institute of Standards and Technology (NIST)

Modeling for Quantitative Scanning Electron Microscopy

Location

Physical Measurement Laboratory, Microsystems and Nanotechnology Division

RO# Location
50.68.02.B8225 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers

name email phone
John S. Villarrubia John.Villarrubia@nist.gov 301.975.3958

Description

Scanning electron microscopy (SEM) is used for metrology of nanometer-scale features in semi-conductor electronics applications and for emerging nanotechnologies. SEM signals include sec-ondary- and backscattered-electron yields. They are determined by the interaction between the instrument (beam energy, beam shape, detector characteristics) and the sample (its materials, topography, …). Misinterpretation of signals results in errors that are important for nanometrology. These must be understood and corrected to obtain sufficient accuracy. We expect opportunities for postdoctoral applicants to develop SEM reference samples in NIST’s NanoFab and to develop models to simulate electron scattering, secondary electron generation, electron transport, scattering in gases (for variable pressure SEM), the effect of e-beam shape on imaging, the effects of electric fields and charging, and electron detectors.

Keywords:
Electron detector modeling; Electron scattering; Electron transport; Reference Samples; Scanning electron microscopy (SEM); Secondary electron generation;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$74,950.00 $3,000.00
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