New developments in detector technology have made possible the acquisition of the full electron scattering distribution at each pixel in a scanning transmission electron microscope (STEM) image. This is a fundamental transformation from the existing image acquisition paradigm and could enable new types of nano- and atomic-scale metrology. The Material Measurement Laboratory has an active effort in the development of electron microscopy methods for high spatial resolution materials characterization and has recently upgraded its aberration-corrected STEM with a high-speed, pixelated detection system. Taking full advantage of this cutting edge technology will require the development of new methods for collecting, processing, and interpreting the large amounts of data we now have access to. Qualified candidates will have a background in electron microscopy or a relevant branch of computer science.

 

Keywords:

Scanning transmission electron microscopy; Nanocharacterization; Electron diffraction; Nanotechnology; Materials science;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants