We perform both theoretical and experimental researches on III-V and II-VI semiconductor-based quantum-well (QW) and superlattice (SL) infrared (IR) detectors, such as HgTe/CdTe, InAs/InGaSb, and GaAs/AlGaAs QWs and SLs. We investigate the band structure, optical absorption, quantum efficiency, dark, and photo-current of these materials and detectors, as well as new designs of surface-plasmon enhanced, frequency tunable and polarization-sensitive IR detectors. We are also interested in silicon visible detector arrays hybridized with CMOS readout circuits. Available laboratory equipment includes Fourier-transform infrared spectroscopy, time-resolved photo-luminescence spectroscopy for carrier lifetime measurement, and all the equipment necessary to fully characterize detector performance from room temperature to cryogenic temperatures. Very recently, we are expanding our research interest to theoretical and experimental studies on proton radiation degradation of electronic and optoelectronic devices.

 

References

Huang DH, et al: Optics Express 22: 27576, 2014

Cardimona DA, et al: Infrared Physics and Technology 54: 283, 2011

Chang CC, et al: Nano Letters 10: 1704, 2010

Huang DH, et al: Transactions of Nanotechnology 7: 151-164, 2008

Kossyrev PA, et al: Nano Letters 5: 1978, 2005

 

key words

Infrared detectors; Quantum wells; Superlattices; Proton radiation degradation; Frequency-tunable detector; Polarization-sensitive detector; Surface-plasmon enhancement;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants