opportunity |
location |
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13.35.01.C0221 |
Wright-Patterson AFB, OH 454337542 |
This research topic seeks to exploit unique properties of emerging semiconductor materials and their heterostructures for next generation electronic devices for high efficiency power and RF applications. Current emphasis is on the investigation of transition metal nitride materials and heterostructures with their metal alloys with respect to electronic transport properties for III-N HEMT applications. Research opportunities exist in epitaxial growth, characterization, theory, computation, device structure design and processing. Resultant device structures will be assessed for high power and high speed performance potential.
Hardy M. T, et al, Appl. Phys. Lett 110, 162104 (2017)
Saha B et al, Appl. Phys. Lett 110, 252104 (2017)
Deng R. et al, J. Appl. Phys 118, 015706 (2015)
Semiconductors; Electronic transport; Electronic properties; Hall-effect; Heterostructures; High electron mobility transistors; RF electronics
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