Opportunity at Air Force Research Laboratory (AFRL)
Investigation of Electronic Transport Properties of Transition Metal Nitrides
Sensors Directorate, RY/Sensors Division
||Wright-Patterson AFB, OH 454337542
|Moser, Neil Austin
This research topic seeks to exploit unique properties of emerging semiconductor materials and their heterostructures for next generation electronic devices for high efficiency power and RF applications. Current emphasis is on the investigation of transition metal nitride materials and heterostructures with their metal alloys with respect to electronic transport properties for III-N HEMT applications. Research opportunities exist in epitaxial growth, characterization, theory, computation, device structure design and processing. Resultant device structures will be assessed for high power and high speed performance potential.
Hardy M. T, et al, Appl. Phys. Lett 110, 162104 (2017)
Saha B et al, Appl. Phys. Lett 110, 252104 (2017)
Deng R. et al, J. Appl. Phys 118, 015706 (2015)
Semiconductors; Electronic transport; Electronic properties; Hall-effect; Heterostructures; High electron mobility transistors; RF electronics
Open to U.S. citizens
Open to Postdoctoral and Senior applicants
$3,000 Supplement for Doctorates in Engineering & Computer Science
Postdoctoral and Senior Associates will receive an appropriately higher stipend based on the number of years of experience past their PhD.