We explore light-matter interactions of plasmonic structures in the infrared (predominately 2-12 microns). Noble metals are “plasmonic” in this wavelength range but weak field confinement and lack of CMOS compatibility diminish possibilities for system integration. Passively tunable materials (highly doped semiconductors, metal alloys) are used to achieve mode confinements that will enable dense system integration at these wavelengths. These designer plasmonic host materials are the most promising due to doping tunability, the possibility of electrical and thermal tuning. The investigated plasmonic structures implementing will provide a scientific foundation that will lead to development of infrared optoelectronic components such as tunable detectors or imagers, sensors, perfect absorbers, filters and on-chip interconnects, and modulators. These next-generation hybrid dielectric/conductor subsystems may be interfaced with on-chip optoelectronics and photonics to provide fast, low-loss CMOS compatible systems. Computational systems, fabrication facilities, and optical measurement instrumentation are available for design, fabrication and characterization of plasmonic devices.

 

References

Cleary JW, et al: Optics Express 23: 3316-3326, 2015

Cleary JW, Soref R, Hendrickson JR: Optics Express 21: 19363-19374, 2013

Soref R, Hendrickson J, Cleary JW: Optics Express 20: 3814-3824, 2012

 

Keywords:

Plasmonics; Infrared; Structured surfaces; Semiconductors; Sensors; Waveguides; Detectors; Absorbers; Optoelectronics;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants