||Wright-Patterson AFB, OH 454337542
Our research focuses on the development of oxide materials and the incorporation of these oxide materials in high performance transistor applications. Current investigations include beta-Ga2O3 MOSFETs, ZnO and InGaZO thin film transistors, and impurity doped ZnO thin films for transparent conductors.
The research entails device design, fabrication, and testing, as well as optimization and analysis of material microstructural and morphological properties to achieve enhanced device performance with particular emphasis on ALD gate dielectric, ohmic contact, and associated interface development. Research is conducted in a fully equipped ISO-5 device fabrication clean room. Materials characterization capabilities include electron microscopy, ellipsometry, x-ray diffraction, atomic force microscopy, Hall effect and photoluminescence.
Green AJ, et al: “3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped beta-Ga2O3 MOSFETs,” IEEE Electron Device Letters 37: 902, 2016
Leedy KD, et al: "Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β−Ga2O3 by pulsed laser deposition," Applied Physics Letters 111: 012103, 2017
Schuette, ML et al: "Ionic metal–oxide TFTs for integrated switching applications," IEEE Transactions on Electronic Devices 63: 1921, 2016
Beta-Ga2O3; Ga2O3; ZnO; Dielectrics; Pulsed laser deposition; Atomic layer deposition; Nanotechnology; Transparent conducting oxide; Power semiconductor devices; MOSFET; RF; Thin film transistor