The objective of this work is to understand and implement the THz timescale switching speeds of antiferromagnetic materials for ultra-fast spin to charge conversion in topologically enabled devices.

The chosen fellow will study spin dynamics in a variety of antiferromagnetic and topological insulator materials and heterostructures.

The fellow might also travel to national laboratories/neutron sources to conduct polarized neutron reflectometry experiments to probe the magnetization characteristics at embedded interfaces.

The fellow will work as part of a large NRL program comprised of fabrication, characterization and theory efforts whose scientific goals are to maximize efficiency in the next generation of low power computing technology, information processing, on-chip THz communication and in-logic memory.

key words

Antiferromagnetic spintronics; topological insulator; spin dynamics; thin film material characterization; spin torque; thin film surface science

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants