name |
email |
phone |
|
Travis James Anderson |
travis.anderson@nrl.navy.mil |
202.404.5854 |
Silicon-based transistors are rapidly approaching fundamental performance limits; therefore, next-generation computing and power switching needs require advanced high-performance devices based on novel electronic materials. To meet these requirements, graphene has been proposed for digital logic and wide-bandgap materials such as GaN, SiC, and Diamond have been proposed for power switching devices. This research opportunity will (1) study the fundamental switching mechanisms in graphene-based transistors, (2) develop high voltage III-N and Diamond power devices, and (3) investigate novel devices resulting from the integration of these materials, including graphene and diamond/lll-N heterojunctions.
References
Tadjer MJ, et al: IEEE Electron Device Letters 33: 23, 2012
Tadjer MJ, et al: Applied Physics Letters 193506: 2012
Graphene; Surface chemistry; Semiconductors; Electrochemistry; Ionic electronics;
Find and choose an agency to see details and to explore individual opportunities.