|Keller, Mark William
|Silva, Thomas J.
Graphene has intriguing possibilities as a material for spintronic applications. Theory predicts that spin diffusion lengths in graphene may be as long as 10 micrometers, which would make graphene an efficient spin conductor. Graphene exhibits high electron mobility, making it a candidate material for high speed spintronics. Theory also predicts the possibility of forming ferromagnetic/antiferromagnetic graphene through doping and/or defects. Epitaxially grown graphene has a 0.25 eV band gap, which might be ideal for low dissipation applications. Many of the relevant properties of graphene as a spintronic material can be investigated using in-plane, non-local spin valve devices. In these devices, spin current is physically separated from charge current, permitting spin transport properties in a non-ohmic configuration. Using such structures, we can characterize the spin diffusion length in graphene made by various techniques, including exfoliation, chemical-vapor deposition, and desorption from SiC. We can also examine ballistic spin transport as a function of temperature and applied magnetic field. We have collaborations with the University of Colorado and the Georgia Institute of Technology for preparing graphene films. NIST has a variety of specialized tools for device fabrication and magnetic characterization available for these investigations.