Opportunity at National Institute of Standards and Technology (NIST)
Graphene for Spintronics
Physical Measurement Laboratory, Electromagnetics Division
Please note: This Agency only participates in the February and August reviews.
|Keller, Mark William
|Silva, Thomas J.
Graphene has intriguing possibilities as a material for spintronic applications. Theory predicts that spin diffusion lengths in graphene may be as long as 10 micrometers, which would make graphene an excellent spin conductor. Graphene exhibits high carrier mobility, making it a candidate material for high-speed spintronics. Our research currently focuses on three areas: (1) understanding CVD growth of wafer-scale graphene on thin films of Cu and other catalytic metals; (2) combining graphene with novel substrates, such as self-assembled organic monolayers and hexagonal boron nitride, to increase carrier mobility and reduce unwanted doping; and (3) characterizing spin transport through graphene and at graphene/ferromagnetic interfaces. The third area involves making structures such as lateral, non-local, spin-valve devices in which spin current is physically separated from charge current, and structures in which pure spin currents are injected into graphene by spin pumping from a ferromagnetic structure whose magnetization in precessing at gigahertz frequencies. Among the facilities available for this work are a custom, cold-wall CVD system for graphene and boron nitride, a unique instrument for measurement of magnetic dynamics in individual nanostructures, and numerous tools for fabrication, imaging, and characterization of complete device structures and component materials. An even wider range of tools, including a cryogenic STM and an ultrafast pulsed X-ray source, is available through ongoing collaborations with multiple groups within NIST and at the University of Colorado. Candidates interested in CVD growth or novel substrates should contact Mark Keller. Candidates interested in spin-transport characterization should contact Tom Silva.
Graphene; Spin valve; Spintronics; Nanofabrication;
Open to U.S. citizens
Open to Regular applicants