Opportunity at National Institute of Standards and Technology (NIST)
Atom Probe Tomography of Complex Semiconductor Nanostructures
Physical Measurement Laboratory, Applied Physics Division
Please note: This Agency only participates in the February and August reviews.
|Bertness, Kristine A.
|Sanford, Norman A.
Laser assisted atom probe tomography offers entirely new approaches for quantitative three-dimensional elemental measurements of semiconductor nanostructures. This methodology is anticipated to advance numerous applications in areas such as photovoltaics, CMOS, optoelectronics, solid-state lighting, and spintronics. However, challenging metrology issues arise since such devices are often composed of doped alloy heterostructures that include distinct regions of semiconductors, metals and oxides. Such multi-constituent assemblies often exhibit significant nanoscale spatial variations in (thermal, electrical) transport properties and optical absorption efficiency. Because these factors can have strong local influences on field ionization, the quantitative interpretation of 3D elemental atomic reconstructions of atom probe data can be quite difficult. Our atom probe laboratory is supported in close proximity with new tools that include advanced FIB, FESEM, aberration-corrected TEM, and a He-ion microscope. EDX, EELS, and thin-film XRD analysis capabilities are also available. The on-site facilities also include the availability MBE growth systems for III-V semiconductors and advanced nanofabrication and processing capabilities. We invite proposals that offer new approaches to atom probe tomography, with particular emphasis on developing correlated quantitative methods across a broad suite of nanostructures encompassing semiconductors, oxides, and metals.
Tomography; Nanostructures; Semiconductor nanostructures; Quantitative atom probe data;
Open to U.S. citizens
Open to Postdoctoral applicants