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Opportunity at National Institute of Standards and Technology (NIST)

Broadband Nanoimaging of Optically Excited Free Carriers

Location

Physical Measurement Laboratory, Applied Physics Division

RO# Location
50.68.62.B5520 Boulder, CO

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Kabos, Pavel kabos@boulder.nist.gov 303.497.3997
Wallis, T. Mitchell mwallis@boulder.nist.gov 303.497.5089

Description

 

The successful design and deployment of next-generation electronic and optoelectronic nanoscale devices will require a detailed understanding of the underlying electronic structure and the electronic response to external stimuli. We seek to understand nanoscale variations in conductivity by leveraging our existing capabilities in AFM-based microwave impedance microscopy (sMIM) to develop new imaging and metrological capabilities for studying nanoscale electronic properties. In particular, we are interested in combining time-resolved optical techniques with our microwave methods to study locally generated carriers and to study their decay and transport across heterointerfaces (p-n junctions, materials interfaces, etc). We seek a researcher to work with us to help develop new tools to study nanoscale electronic devices. Scanning probe and/or optics experience is preferred.

 

 

Keywords:
Microwave; Nanoscale; Scanning probe microscopy; Near-field optics;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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