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Opportunity at National Institute of Standards and Technology (NIST)

Enriched Silicon Quantum Devices

Location

Physical Measurement Laboratory, Quantum Measurement Division

RO# Location
50.68.41.B8247 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Pomeroy, Joshua M. joshua.pomeroy@nist.gov 301.975.5508

Description

Enriched 28Si is a critical material for solid state QI due to long quantum coherence times (T2) as measured by bulk ESR and NMR studies. The enriched silicon allows coherence times that exceed minutes and also results in substantially reduced optical line widths. Following these ensemble measurements, single electron devices fabricated in enriched silicon have been shown to have impressive coherence times, as well. In this project, we have demonstrated the ability to produce crystalline thin films of 28Si enriched to >99.9999% from natural abundance silane. We are depositing this silicon onto natural silicon substrates to grow epitaxial films for use in fabrication of quantum devices. Our work to fabricate quantum devices from the enriched silicon includes conventional electron beam lithography, STM hydrogen lithography and collaborative research.

 

Keywords:
Enriched silicon; Quantum information; Quantum devices; Single electron devices; Coulomb blockade;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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