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Opportunity at National Institute of Standards and Technology (NIST)

Quantum Information Applications of Si Single Electron Tunneling Devices

Location

Physical Measurement Laboratory, Quantum Measurement Division

RO# Location
50.68.41.B7002 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Zimmerman, Neil M. neilz@nist.gov 301.975.5887

Description

Tunable-barrier Si single-electron tunneling (SET) devices give us the possibility of moving and manipulating single electrons. Through this control, we can form quantum dots that have just one electron on them and manipulate them in coherent and non-coherent ways. Our ultimate goal is to investigate charge and spin qubits in these devices. We are investigating such issues as: (1) What does it mean to open a switch (i.e., how do electrons make the transition from a delocalized cloud of continuous charge to discrete packets of charge)? (2) What are the possible advantages of tunable barrier devices, including the ability to form a dot with only one electron in the conduction band? (3) What are sources of decoherence (e.g., defect motion at the interfaces)?

 

Keywords:
Nanoscale electronics; Quantum computing; Quantum information; Single-electron devices;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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