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Opportunity at National Institute of Standards and Technology (NIST)

Advanced New Memory Devices

Location

Physical Measurement Laboratory, Engineering Physics Division

RO# Location
50.68.31.C0059 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Cheung, Kin P. kin.cheung@nist.gov 301.975.3093

Description

Modern society depends on information creation, transmission, storage, and manipulation. At the center of it all is memory. Computing technology is already memory bandwidth limited. Current memory technologies are running out of room for further improvement to meet the need of the information economy. Breakthrough in memory technology is a widely recognized need. We are working on new memory concepts to address this need. In particular, we are developing polymer based memory technology. We already demonstrated a new ferroelectric memory that is free from the effect of depolarization field. We are planning a DNA inspired memory technology. Our goal is to address the need of high-performance computing. In other words, we aim for high-speed, high-density, high-endurance, non-volatile, low power and scalable. Our work involves physics, chemistry, biology and electrical engineering. We seek experimentalists with any of these back grounds.

 

Keywords:
Computing; Data center; Information; Storage;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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