Opportunity at National Institute of Standards and Technology (NIST)
Advanced New Memory Devices
Physical Measurement Laboratory, Engineering Physics Division
Please note: This Agency only participates in the February and August reviews.
|Cheung, Kin P.
Modern society depends on information creation, transmission, storage, and manipulation. At the center of it all is memory. Computing technology is already memory bandwidth limited. Current memory technologies are running out of room for further improvement to meet the need of the information economy. Breakthrough in memory technology is a widely recognized need. We are working on new memory concepts to address this need. In particular, we are developing polymer based memory technology. We already demonstrated a new ferroelectric memory that is free from the effect of depolarization field. We are planning a DNA inspired memory technology. Our goal is to address the need of high-performance computing. In other words, we aim for high-speed, high-density, high-endurance, non-volatile, low power and scalable. Our work involves physics, chemistry, biology and electrical engineering. We seek experimentalists with any of these back grounds.
Computing; Data center; Information; Storage;
Open to U.S. citizens
Open to Postdoctoral applicants