The future of nanoelectronic technologies requires new device concepts and novel materials, but many of their critical electronic properties are unknown. In this opportunity, we will use two approaches to determine key electronic properties: (1) nanometer-scale imaging with energy filtering using a photoemission electron microscope (PEEM) and (2) area-integrated electron spectroscopies. The electronic band structure and energy band levels are defining electronic properties that govern how an electronic device operates and these properties are dependent on how real heterointerfaces are formed. In addition to using electron-based spectroscopies, we will investigate how these heterointerfaces impact the final electronic device by using DC- and AC-based electrical characterization methods. We are interested in emerging materials and devices based on organic (molecular) materials, 2D materials, and nanotubes. Research is done in close collaboration with other groups at NIST with expertise in complementary measurement techniques, materials growth, and device fabrication.
Pookpanratana S, et al: “Non-volatile memory devices with redox-active diruthenium molecular compound.” Journal of Physics: Condensed Matter 28: 094009, 2016
Pookpanratana S, Lydecker LK, Richter CA, C. A. Hacker CA: “Self-Assembled Monolayers Impact Cobalt Interfacial Structure in NanoElectronic Junctions.” Journal of Physical Chemistry C 119: 6687, 2015
Goetz KP, Tsutsumi J, Pookpanratana S, et al: “Polymorphism in the organic charge-transfer complex dibenzotetrathiafulvalene-7,7,8,8-tetracyanoquinodimethane (DBTTF-TCNQ) and its effect on optical and electrical properties.” Advanced Electronic Materials 2: 1000203, 2016
Electronic structure; Nanoelectronics; Organic electronics; Photoemission; PEEM; Molecular films; Nanotechnology; Interfaces; Electron spectroscopy;