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Opportunity at National Institute of Standards and Technology (NIST)

Modeling for Scanning Electron and Ion Microscopy

Location

Physical Measurement Laboratory, Engineering Physics Division

RO# Location
50.68.31.B8225 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Villarrubia, John S. John.Villarrubia@nist.gov 301.975.3958

Description

Scanning electron microscopes are being used for metrology of nanometer-scale features in semiconductor electrons applications and for emerging nanotechnologies. Helium ion microscopes are a new tool under consideration for similar applications. Images in both microscopes contain artifacts that result from the interaction of the incident particles with the samples. These artifacts are large enough to be important for nanometrology. They must be understood and corrected to obtain sufficient accuracy. Opportunities are available to participate in the development of models to simulate electron scattering, secondary electron generation, electron transport, scattering in gases (for variable pressure SEM), modeling of e-beam shape and its effect on imaging, the effects of electric fields, and charging and electron detectors.

 

Keywords:
Electron detector modeling; Electron scattering; Electron transport; Helium ion microscopy; Scanning electron microscopy (SEM); Secondary electron generation;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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