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Opportunity at National Institute of Standards and Technology (NIST)

Atom-based Silicon Quantum Electronics for Quantum Computing and Analog Quantum Simulation

Location

Physical Measurement Laboratory, Engineering Physics Division

RO# Location
50.68.31.B8024 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Silver, Richard M. richard.silver@nist.gov 301.975.5609

Description

Controlling the quantum state of individual electrons is a challenge central to many fundamental measurements and future computation architectures. We are fabricating and measuring solid state implementations of atomically precise devices with applications to quantum computing and analog quantum simulation. The research plan includes the use of atomically precise patterning to deterministically place dopant atoms in a Si lattice to make prototype atom-based solid state devices and qubits, measurement of the properties of individual atomically precise dopants or atom-clusters, and development of low temperature high frequency control of single and multiple qubits based on single elctron spin manipulation. This project is developing the fabrication and measurement methods needed to reach the ultimate scaling limits for quantum devices in Si and the implementation of solid state quantum computing based on individual donor qubits.

Advances in fabrication of 3D structures with near atomic precision via direct patterning and dopant placement on an atomically defined surface are being used to impact on quantum device research. Atomically precise placement of dopant atoms to realize atomic scale devices along with advances in STM that achieve robust atomic scale fabrication provide a path to the viable fabrication of quantum devices and electron measurements at scales never before achievable. We are using high frequency microwave signals to electronically manipulated and measure single electron spins.

To realize the necessary atomic precision, we are using hydrogen-based scanning probe lithography. H atoms are selectively removed from Si dimers which form activated sites that can be further processed. The exposed or activated Si atoms can selectively adsorb a dopant atom (phosphorus) and, with subsequent thermal processing and Si overgrowth, provide the basis for atomically precise dopant placement. This research also has significant spinoff applications using atomically precise 3-D quantum structures for use as quantum sensors and to develop new atomically engineered quantum materials.

 

Keywords:
Quantum computing; Scanning probe lithography; Analog quantum simulation; Nano-fabrication; Quantum devices; Coherent qubit manipulation

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$72,028.00 $3,000.00
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