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Opportunity at National Institute of Standards and Technology (NIST)

Scanning Probe Metrology

Location

Physical Measurement Laboratory, Engineering Physics Division

RO# Location
50.68.31.B1498 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Kopanski, Joseph J. joseph.kopanski@nist.gov 301.975.2089

Description

We are developing scanning probe microscopes to characterize and manipulate the physical and electrical properties of electronic devices, semiconductors, and related materials at the nanometer resolution scale. Projects are aimed at impacting silicon technology +5 years in the future or at characterization problems unique to compound semiconductors or three-dimensional integrated circuits and through-silicon-vias (TSVs). We recently developed scanning capacitance microscopy as a tool for measuring the two-dimensional dopant profile across a silicon p-n junction. We are particularly interested in projects to develop techniques to measure material properties in three dimensions and that have spatial resolution below 1-nm. Our interests extend to other scanning probe techniques, including scanning micorwave microscopy, surface photovoltage microscopy, and other optically pumped probes.

 

Keywords:
Atomic force microscopy; Electrical properties; Nanoscale analysis; Semiconductor doping;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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