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Opportunity at National Institute of Standards and Technology (NIST)

New Electron-Spin-Resonance Method for New Applications

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

RO# Location
50.68.03.C0060 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Cheung, Kin P. kin.cheung@nist.gov 301.975.3093

Description

Magnetic resonance is a very powerful technique to study various subjects such as structural biology, solar cell, battery, etc. at the molecular level. We are developing new approaches to electron-spin-resonance (ESR) aimed at expanding the capability of ESR, particularly to improve sensitivity and to find new applications. One active project is to integrate electrically-detected electron-spin-resonance to the fast scan cyclic voltammetry, thus marrying two extremely powerful techniques to create a whole new range of capabilities. There are a few other related projects on-going in our team. Our work involves physics, chemistry, biology, and electrical engineering, and we seek experimentalists with any one of these backgrounds.

 

Keywords:
Defect; Nanoscale; Magnetic resonance; Bio-molecule; protein; DNA;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$72,750.00 $3,000.00
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