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Opportunity at National Institute of Standards and Technology (NIST)

Advanced New Memory Devices

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

RO# Location
50.68.03.C0059 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Cheung, Kin P. kin.cheung@nist.gov 301.975.3093

Description

Modern society depends on information creation, transmission, storage, and manipulation. At the center of it all is memory. Computing technology is already memory bandwidth limited. Current memory technologies are running out of room for further improvement to meet the need of the information economy. Breakthrough in memory technology is a widely recognized need. We are working on new memory concepts to address this need. One of the candidates we are working on is a new polar polymer based analog memory technology that is both very high speed and very long retention. We aim for high-speed, high-density, high-endurance, non-volatile, low power and scalable. Our work involves physics, chemistry, and electrical engineering. We seek experimentalists with any of these back grounds.

 

Keywords:
Computing; Data center; Information; Storage;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$72,750.00 $3,000.00
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