Single Electron Devices for Quantum Information and Metrology in Silicon
Physical Measurement Laboratory, Nanoscale Device Characterization Division
NIST only participates in the February and August reviews.
Silicon-based single electron devices (SED) allow control and measurement of both the spin and charge degrees of freedom for individual electrons. This control imbues SEDs with a wide array of applications, including quantum information (QI) and electrical current standards. We are working to build viable qubits in silicon and an electrical current standard necessary for the redefinition of the SI by focusing on understanding the fundamental limitations of quantum mechanical control and manipulation. Our strategy is to explore these limitations through high-frequency, low-temperature coherent measurements, charge pumping measurements, and standard defect measurements in both quantum dot-based devices and atomically precise single-atom devices in silicon.