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Opportunity at National Institute of Standards and Technology (NIST)

Enriched Silicon Quantum Devices

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

RO# Location
50.68.03.B8247 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Pomeroy, Joshua M. joshua.pomeroy@nist.gov 301.975.5508

Description

Enriched silicon is critical for silicon quantum devices since the 29Si isotope is a leading contributor to qubit decoherence. Enriching silicon leads to long quantum coherence times (T2) measured by ESR and in qubit fidelity studies. In this project, we produce crystalline thin films of 28Si enriched to >99.9999% directly from natural abundance silane, a novel approach that allows us to produce the most highly enriched silicon in the world. We are depositing this silicon onto natural silicon substrates and using it to fabricate electronic and quantum devices that provide feedback for refinement of the silicon and other materials used to fabricate the qubits. Additionally, we are exploring novel dopant schemes to enable superconducting-semiconducting materials or direct coupling to photon states that can preserve quantum information.

Keywords:
Enriched silicon; Quantum information; Quantum devices; Single electron devices; Coulomb blockade; qubit; hybrid quantum devices; materials for quantum

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$72,750.00 $3,000.00
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