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Opportunity at National Institute of Standards and Technology (NIST)

Precision Materials for Quantum Devices

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

RO# Location
50.68.03.B7674 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Pomeroy, Joshua M. joshua.pomeroy@nist.gov 301.975.5508

Description

Tunnel junctions, single electron transistors and superconducting resonators are fabricated using ultra-high vacuum metals’ deposition and in situ low energy plasma processing. These devices are then measured at cryogenic temperatures as precursors to more complex hybrid quantum devices incorporating MOS (metal-oxide-semiconducting) qubits. In particular, devices utilizing aluminum oxides (AlOx) formed in ultraclean environments with plasma oxidation exhibit reduced densities of defects promising for use in quantum devices. Ongoing work is focused on making simplified semiconductor qubits as diagnostic or benchmarks for refinement of materials and designs to inform more advanced quantum processing devices. Additionally, new directions for coupling qubits between paradigms is being pursued, e.g., MOS-dopant, MOS-superconducting and MOS-optical coupling schemes.

Keywords:
Transport measurements; Spin decoherence; Isotopic enrichment; single electron transistor; quantum devices; MOS; metal-oxide-semiconductor; hybrid quantum devices; solid state quantum computing; quantum information sciences; cryogenic transport

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$72,750.00 $3,000.00
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