The National Academies Logo
Research Associateship Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies - NIST

  Sign InPrintable View

Opportunity at National Institute of Standards and Technology (NIST)

On-chip Metrology for mm-Wave Power Measurements in Integrated Circuits

Location

Communications Technology Laboratory, Radio Frequency Division

RO# Location
50.67.22.B8440 Boulder, CO 80305

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Long, Christian J christian.long@nist.gov 303.497.6559
Orloff, Nathan Daniel orloff@nist.gov 303.497.4938

Description

Consumer demand for small, light-weight, and energy-efficient electronics is driving the development of highly integrated devices. The resulting miniaturization of components has resulted in a paradigm shift in electrical test and measurement, with chip-scale electrical probing and evaluation quickly replacing more traditional connectorized measurements. Concurrently, the growing demand for wireless data is pushing manufacturers to build mobile handsets that operate within higher and higher frequency bands. Many proposed fifth-generation (5G) mobile handsets will operate in bands that lie in the mm-wave frequency regime (30 GHz to 300 GHz). In this frequency regime, the building blocks of integrated circuits, (e.g., transmission lines, filters, and amplifiers) are typically more power-hungry than at lower frequencies, making the cost per unit of transmitted power increase substantially. Compounding this problem, the current state-of-the-art in on-chip power measurements suffers from relatively large uncertainties, especially above 110 GHz. The resulting combination of cost and uncertainty is limiting the deployment of mm-wave communications devices. This research opportunity focuses on improving the state-of-the art in on-chip power measurements through the development of high-sensitivity, SI-traceable, on-chip standards. The interested candidate will have the opportunity to learn mm-wave device design, microfabrication, broadband (DC-1 THz) on-wafer metrology, and finite-element simulation techniques, among other skills.

 

References

Yang HH, Rebeiz GM: “Sub-10-pW/Hz0.5 Uncooled Micro-Bolometer with a Vacuum Micro-Package.” IEEE Transactions on Microwave Theory and Techniques 64.7: 2129-2136, 2016

Wang DB, Liao XP, Liu T: “A thermoelectric power sensor and its package based on MEMS technology.” Journal of Microelectromechanical Systems 21.1: 121-131, 2012

 

Keywords:
Microwave; mm-wave; On-chip; Metrology; Wireless; On-wafer; Microfabrication; Simulations; Power;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
Copyright © 2014. National Academy of Sciences. All rights reserved. 500 Fifth St. N.W., Washington, D.C. 20001.
Terms of Use and Privacy Statement.