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Opportunity at National Institute of Standards and Technology (NIST)

On-Chip Metrology for the mm-Wave Revolution

Location

Communications Technology Laboratory, Radio Frequency Division

RO# Location
50.67.22.B8279 Boulder, CO 80305

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Orloff, Nathan Daniel orloff@nist.gov 303.497.4938

Description

The emerging internet-of-things heralds a new age of connectivity, accelerating the ever-growing demand for wireless data. Revenue from fixed-line and mobile data already accounts for over 3% of US GDP and the estimated value of wireless spectrum exceeds $500B/GHz. Given that the wireless spectrum below 10 GHz is saturated, future growth requires expansion to mm-wave frequencies, where the wireless spectrum is largely untapped. Two of the main challenges associated with on-chip mm-wave devices are that (1) high power mm-wave sources and receivers are expensive and unreliable, and (2) on-chip metrology from 110 GHz to 1 THz (power, noise, phase, impedance) are inaccurate and not provided by NIST. These factors are a major impediment to the adoption of mm-wave technologies, stymying commerce. The Associate will open the mm-wave market by developing on-chip metrologies for frequencies up to 1 THz. The Associate will learn microfabrication, finite-element simulation applications, on-wafer measurement and characterization techniques, circuit design, calibrations algorithms, optics, and gain hands on experience with novel material systems for the next generation of telecommunications technology.

 

Reference

Lee CH, et al: Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics, Nature 502: 7472, 2013. 10.1038/nature12582

 

Keywords:
Optics; Telecommunications; mm-wave; Terahertz; Ferroelectrics; Materials; Microwave; Physics; Microelectronics;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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