Opportunity at National Institute of Standards and Technology (NIST)
On-Chip Metrology for the mm-Wave Revolution
Communications Technology Laboratory, Radio Frequency Technology Division
Please note: This Agency only participates in the February and August reviews.
|Orloff, Nathan Daniel
The emerging internet-of-things heralds a new age of connectivity, accelerating the ever-growing demand for wireless data. Revenue from fixed-line and mobile data already accounts for over 3% of US GDP and the estimated value of wireless spectrum exceeds $500B/GHz. Given that the wireless spectrum below 10 GHz is saturated, future growth requires expansion to mm-wave frequencies, where the wireless spectrum is largely untapped. Two of the main challenges associated with on-chip mm-wave devices are that (1) high power mm-wave sources and receivers are expensive and unreliable, and (2) on-chip metrology from 110 GHz to 1 THz (power, noise, phase, impedance) are inaccurate and not provided by NIST. These factors are a major impediment to the adoption of mm-wave technologies, stymying commerce. The Associate will open the mm-wave market by developing on-chip metrologies for frequencies up to 1 THz. The Associate will learn microfabrication, finite-element simulation applications, on-wafer measurement and characterization techniques, circuit design, calibrations algorithms, optics, and gain hands on experience with novel material systems for the next generation of telecommunications technology.
Lee CH, et al: Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics, Nature 502: 7472, 2013. 10.1038/nature12582
Optics; Telecommunications; mm-wave; Terahertz; Ferroelectrics; Materials; Microwave; Physics; Microelectronics;
Open to U.S. citizens
Open to Postdoctoral applicants