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Opportunity at National Institute of Standards and Technology (NIST)

On-Chip Metrology for the mm-Wave Revolution


Communications Technology Laboratory, Radio Frequency Technology Division

RO# Location
50.67.22.B8279 Boulder, CO

Please note: This Agency only participates in the February and August reviews.


Name E-mail Phone
Orloff, Nathan Daniel 303.497.4938


The emerging internet-of-things heralds a new age of connectivity, accelerating the ever-growing demand for wireless data. Revenue from fixed-line and mobile data already accounts for over 3% of US GDP and the estimated value of wireless spectrum exceeds $500B/GHz. Given that the wireless spectrum below 10 GHz is saturated, future growth requires expansion to mm-wave frequencies, where the wireless spectrum is largely untapped. Two of the main challenges associated with on-chip mm-wave devices are that (1) high power mm-wave sources and receivers are expensive and unreliable, and (2) on-chip metrology from 110 GHz to 1 THz (power, noise, phase, impedance) are inaccurate and not provided by NIST. These factors are a major impediment to the adoption of mm-wave technologies, stymying commerce. The Associate will open the mm-wave market by developing on-chip metrologies for frequencies up to 1 THz. The Associate will learn microfabrication, finite-element simulation applications, on-wafer measurement and characterization techniques, circuit design, calibrations algorithms, optics, and gain hands on experience with novel material systems for the next generation of telecommunications technology.



Lee CH, et al: Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics, Nature 502: 7472, 2013. 10.1038/nature12582


Optics; Telecommunications; mm-wave; Terahertz; Ferroelectrics; Materials; Microwave; Physics; Microelectronics;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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