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Opportunity at National Institute of Standards and Technology (NIST)

Advanced Nanoscale Property Characterization by Atomic Force Microscopy

Location

Material Measurement Laboratory, Materials Measurement Science Division

RO# Location
50.64.31.C0621 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Stan, Gheorghe gheorghe.stan@nist.gov 301 975 3675

Description

In the last few decades, the basic nanoscale three-dimensional (3D) surface profiling of the atomic force microscope (AFM) has been grafted with various property characterizations that are extracted from the tip-sample interactions stimulated during scanning. Some of these AFM-based property characterization techniques are currently witnessing robust improvements in terms of their spatial resolution and quantitative measurement. They are posed now to advance from benchmark tests on well-defined geometries and materials to structures and integrated devices of interest for nanoscale applications (semiconductor industry, micro- and nano- electromechanical devices, etc.). Such advancement requires seamless integration of high-speed measurements onto basic AFM modes and realistic modeling of the AFM probe-sample interaction.

This research opportunity will focus on developing state of the art AFM instrumentation and computation modeling for 3D nanoscale property characterizations. In either mechanical or electrical measurements, both in quasi-static and dynamic AFM modes, advanced modeling of the tip-sample contact and cantilever’s dynamics are sought to improve the accuracy and spatial resolution of the mapped properties. These developments will be incorporated in high-throughput property characterization AFM modes that are much in need for the nanoscale design and fabrication of the next generation of materials and structures.

Keywords:
atomic force microscopy; AFM instrumentation; nanoscale interactions; 3D nanoscale property characterization; tip-sample contact modeling; nanomechanics; electrostatic; electromechanics; high-throughput data acquisition; time and frequency domain measurements; semiconductor industry; micro- and nano- electromechanical devices;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$72,750.00 $3,000.00
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