Opportunity at National Institute of Standards and Technology (NIST)
Methods of Synthesis and Analysis of Lattice Mismatched One- and Two-Dimensional Semiconductor Heterojunctions
Material Measurement Laboratory, Materials Measurement Science Division
Please note: This Agency only participates in the February and August reviews.
The directed-assembly of semiconductor nanostructures has always held a great fascination, as it opens up new possibilities for nanoscale technologies. In our laboratory we have developed a method for lateral growth of nanocrystals using a metal-assisted vapor-liquid-solid growth process. This method allows an unprecedented control over growth site and orientations of nanocrystals on technologically relevant scales.
The goal of this project is to extend this approach to realize heterojunctions of highly mismatched semiconductors to determine limits of defect tolerance in 1D and 2D heterojunctions and to explore novel material properties that cannot be obtained using traditional nanocrystal growth methods. This effort also requires devising optical and electron microscopy methods for rapid detection of nanoscale defects at the ensemble level. Characterization tools include atomic force microscopy, four-probe station for electrical measurement, and laser-based optical microscopy for the spectroscopic and lifetime characterization of large bandgap semiconductors at the single NW level. Facilities for structural characterization include a 300 keV aberration-corrected (FEI Titan 80-300) transmission electron microscope with high energy electron loss spectroscopy capabilities, a FEI dualbeam equipped with EBSD and EDS setups and a SEM equipped with cathodoluminescence setup
Directed assembly; Light emitting diodes, Field effect transistor; Focused ion beam; Nano-optics; Nanocrystal growth; Nanodevice; Nanotechnology; Nanowire; Optical microscopy; Cathodoluminescence;
Open to U.S. citizens
Open to Postdoctoral applicants