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Opportunity at National Institute of Standards and Technology (NIST)

Integration of High-Throughput Experimentation and Physical Property Data Bases

Location

Material Measurement Laboratory, Materials Measurement Science Division

RO# Location
50.64.31.B7018 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Karen, Vicky Lynn vicky.karen@nist.gov 301.975.6255

Description

High-throughput experimentation can be used to systematically generate large amounts of data spanning extensive compositional landscape and multidimensional parameter space. A major challenge in such a strategy is to devise an effective and efficient way to handle, store, visualize, and simultaneously analyze data taken on individual combinatorial libraries. The data are often from measurements for disparate physical properties and may include structural characterization, all done on an individual library containing hundreds of different members. We are particularly interested in developing techniques to facilitate the high-throughput analysis through rapid cross-referencing with existing crystallographic inorganic materials data bases. Techniques are being developed to quickly determine the distribution of structural phases across composition spread samples through the use of cluster analysis techniques and computational crystallography. Research involves design, synthesis, and high-throughput characterization of combinatorial libraries of metallic alloys and metal oxide systems, as well as development of domain-specific application software for data handling, retrieval, and display using three-dimensional computer graphics. Some of the data bases employed in this research are three-dimensional crystal structure, phase equilibria, and materials properties.

 

Keywords:
Combinatorial methods; Computation; Crystallography; Inorganics; Metals; Modeling; Oxides; Structure-property relationships;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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