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Opportunity at National Institute of Standards and Technology (NIST)

Combinatorial Methods for Thin-Film Functional Materials and Devices

Location

Material Measurement Laboratory, Materials Measurement Science Division

RO# Location
50.64.31.B5927 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Green, Martin L. martin.green@nist.gov 301.975.8496

Description

Combinatorial materials science methodologies can be used to generate a wealth of materials data that can optimize composition, structure, and properties of electronic, magnetic, energy, and environmental materials and devices. Research activities include (1) thin-film deposition of combinatorial libraries using a state-of-the-art sputtering/pulsed laser tool with sub-atomic layer deposition capabilities; and (2) development and utilization of high-throughput structure and property measurement methods, including x-ray diffraction structure mapping, nanocalorimetry and capacitance-voltage, Seebeck coefficient, and electrical resistivity measurements. Thus far, research has focused on advanced gates stacks for CMOS devices and thermoelectric materials. Opportunities exist to investigate other functional materials and devices, and develop additional high-throughput methods in the areas of magnetic storage devices, photonic materials, and sustainability applications.

 

Keywords:
Carbon sequestration materials; Combinatorial methods; Electronic materials and devices; Functional material and devices; High-k gate dielectrics and CMOS devices; Magnetic storage devices; Materials for sustainability applications (e.g., CO2 sequestration); Photonic materials and devices; Thermoelectric and energy conversion materials; Thin films;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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