The National Academies Logo
Research Associateship Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies - NIST

  Sign InPrintable View

Opportunity at National Institute of Standards and Technology (NIST)

Low-Dimensional Materials for Electronics, Photonics, Energy, and Sensors

Location

Material Measurement Laboratory, Materials Science and Engineering Division

RO# Location
50.64.21.B8344 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Davydov, Albert albert.davydov@nist.gov 301.975.4916

Description

Low-dimensional electronic materials, including few-atoms thick 2D semiconductors, topological insulators and superconductors, have attracted considerable attention for potential application in nanoscale devices, including beyond-CMOS electronics, quantum computers, chemical sensors, photodetectors, etc. Prospective advantages over traditional thin-film devices include exceptional structural quality, high surface-to-volume ratio, bottom-up device engineering with high-density on-chip integration, and utilization of quantum size effects. In this project, we are developing metrology needed for the synthesis, processing, and characterization of low-dimensional materials to enable reliable nanoscale device development and manufacturing. We operate several chemical vapor transport and directional solidification reactors for scalable fabrication of transition metal dichalcogenides and other layered van-der-Waals materials. These fabrication tools are complemented by post-growth device assembly, nanoscale structural/electrical/optical measurements, and comprehensive multiscale & multiphysics material and device modeling under Material Genome Initiative. We are open to extending these approaches to new classes of quantum materials as guided by emerging technology needs.

We are interested in research topics related to the fabrication and scalable assembly of low-dimensional structures with controlled properties into functional devices and to the development of methods for correlating their structural, compositional, electrical, and optical properties to enable a broad range of electronic, photonic, and sensor applications, including for flexible/transparent electronics, beyond-CMOS logic and memory, quantum computing, etc. Excellent collaborative opportunities exist with staff in other NIST laboratories.

 

Keywords:
Electronic materials; quantum materials; low-dimensional semiconductors; 2D layers; transition metal dichalcogenides; crystal growth; electronics; chemical sensors; energy; beyond CMOS devices;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
Copyright © 2014. National Academy of Sciences. All rights reserved. 500 Fifth St. N.W., Washington, D.C. 20001.
Terms of Use and Privacy Statement.