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Opportunity at National Institute of Standards and Technology (NIST)

Low-Dimensional Semiconductor Materials for Electronics, Photonics, Energy, and Sensors

Location

Material Measurement Laboratory, Materials Science and Engineering Division

RO# Location
50.64.21.B8344 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Davydov, Albert albert.davydov@nist.gov 301.975.4916

Description

Low-dimensional electronic materials, including nanowires and atomically-thin 2D layered compounds, have attracted considerable attention for potential application in nanoscale devices, including Beyond-CMOS electronics, chemical sensors, batteries, LEDs, photodetectors, etc. Prospective advantages over traditional thin-film devices include exceptional structural quality, high surface-to-volume ratio, bottom-up device engineering and on-chip integration on variety of substrates, and utilization of quantum size effects. In this project, we are developing metrology needed for the synthesis, processing, and characterization of semiconducting low-dimensional materials to enable reliable nanoscale device development and manufacturing. We operate several CVD reactors for scalable fabrication of ultra-thin epi-layers of MoS2 and other transition metal dichalcogenides, as well as vertical nanowire arrays of silicon and Group III nitrides. These fabrication tools are complemented by post-growth device assembly, nanoscale structural/electrical/optical measurements, and comprehensive multiscale & multiphysics material and device modeling under Material Genome Initiative. We are open to extending these approaches to new classes of electronic materials with reduced dimensionality, such as delta-doped diamond and ultra-thin metal nitride films, as guided by emerging nanotechnology needs.

We are interested in research topics related to the fabrication and scalable assembly of low-dimensional structures with controlled properties into functional devices and to the development of methods for correlating their structural, compositional, electrical, and optical properties to enable a broad range of electronic, photonic, and sensor applications, including for flexible/transparent electronics, Beyond-CMOS logic and memory, etc. Excellent collaborative opportunities exist with staff in other NIST laboratories.

 

Keywords:
Electronic materials; Low-dimensional semiconductors; Nanowires; 2D layers; MoS2; Transition metal dichalcogenides; Gallium nitride; Silicon; Electronics; Chemical sensors; Energy; beyond CMOS;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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