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Opportunity at National Institute of Standards and Technology (NIST)

First-Principle Based Modeling for Advancing 2D Electronics

Location

Material Measurement Laboratory, Materials Science and Engineering Division

RO# Location
50.64.21.B8083 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Burton, Benjamin Paul benjamin.burton@nist.gov 301.975.6043
Tavazza, Francesca francesca.tavazza@nist.gov 301.975.6143

Description

To design novel 2D materials and devices (e.g., sensors and transistors), we are interested in Density Functional Theory (DFT) and/or Tight Binding (TB) based modeling of phase diagrams, electronic-, and transport-properties in 2D-like materials, such as MoS2. An important part of this project will be the simulation of actual devices and the determination of how transport properties are affected by defects, impurities, and other realistic deviations from ideality. Because this project will be conducted in close collaboration with experimentalists, direct comparison with measured data will be possible; and modeling results will be used to interpret experimental data and to guide subsequent experimental work.

 

Keywords:
DFT; 2D materials; Electronic devices; Simulation; Transport properties; Phase-diagram;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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