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Opportunity at National Institute of Standards and Technology (NIST)

Spintronics

Location

Material Measurement Laboratory, Materials Science and Engineering Division

RO# Location
50.64.21.B5606 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Dennis, Cindi L. cindi.dennis@nist.gov 301.975.6041

Description

The rapidly emerging field of “Spintronics” is based on the use of electron spin instead of electron charge as the property on which the operation of a new generation of microelectronic devices is based. The term “spin” comes from the property of electron spin, which is the basis of ferromagnetism. Electron spin is already the basis for magnetoresistive sensors that have revolutionized the hard disk drive industry. If spin-based materials can be used to replace DRAMs and perform processor logic operations, revolutionary changes in the entire computer industry may follow. Because these devices would operate on the electron spin, rather than the electron charge as in conventional electronics, they may be much faster, denser, and smaller than current charge-based electronics. In our current work on Spintronics, we are fabricating and testing structures for perpendicular spin-transfer-torque magnetoresistive-random-access memory (STT-MRAM) that may replace DRAM in the coming decade.

 

Keywords:
DRAM; Electron; Electron tunneling; Film; Magnetic; Magnetorsistance; Microelectronics; MRAM; Semiconductor; Spin;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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