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Opportunity at National Institute of Standards and Technology (NIST)

Measurements for Resistive Switching Devices

Location

Center for Nanoscale Science & Technology , Center for Nanoscale Science and Technology

RO# Location
50.62.01.B8134 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers

Name E-mail Phone
Centrone, Andrea andrea.centrone@nist.gov 301.975.8225
McClelland, Jabez J. jabez.mcclelland@nist.gov 301.975.3721
Zhitenev, Nikolai zhitenev@nist.gov 301.975.6039

Description

Nanoscale resistive switches, with their simple two-terminal configuration and hysteretic behavior, present an exciting opportunity for developing new approaches to electronic circuitry, from non-volatile memory to synapse mimicking in neuromorphic systems. However, the mechanisms by which resistive switching occurs are poorly understood and vary greatly across the many systems known to exhibit this behavior. There is a critical need for new measurement techniques that can help elucidate how the devices transform from a conductive state to a resistive state and vice versa. We are conducting research on new approaches to measuring these devices as a collaborative, cross-disciplinary effort within the NanoLab in NIST’s Center for Nanoscale Science and Technology. Current efforts focus on imaging the switching process with a range of techniques including thermal atomic force microscopy, electron-beam induced current, cathodoluminescence, and specialized FIB instrumentation. A full complement of fabrication tools in the CNST Nanofab is also available for device fabrication.

 

Keywords:
Resistive switching; Memristor; Neuromorphic computing; Nonvolatile memory; Thermal AFM; Electron beam induced current; Oxide electronics; Ion transport;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants
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