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Opportunity at U.S. Army Research, Development & Engineering Command, NVESD (RDEC/NVESD)

Antimonide Based Infrared Detectors

Location

Night Vision/Electronic Sensors Directorate, Science and Technology

RO# Location
33.01.08.B8447 Fort Belvoir, VA 220605806

Advisers

Name E-mail Phone
Baril, Neil Francis neil.f.baril.civ@army.mil 703.704.4900

Description

This is an opportunity to make significant contributions to the development of new sensors for the next generation of infrared imaging systems. Recently, substantial advancements have been made in the investigation of group III-antimonide based infrared detectors utilizing engineered materials, such as the type II strain layer superlattice, bulk InAsxSb(1-x), and novel hetero structure device designs, such as the nBn. The potential advantages of these antimonide based infrared detectors include increased performance for long wavelength and dual band infrared detectors, reduced cost, size, weight, and power (SW&P). Advantages from improved uniformity and increased process yields of III-V detector materials are being realized in the mid-wavelength infrared (MWIR), and sensors are now becoming commercially available in high operating temperature (HOT) and HD formats. However, several challenges need to be addressed before long wavelength infrared and dual band sensors based on III-antimonide materials are incorporated into imaging systems.

Specific topics of interest include (1) investigation of surface and interface chemistry of the antimonide based materials to gain a better understanding of how current leakage pathways form and identify novel mitigation strategies, (2) development of new inductively coupled plasma mesa delineation and device processing techniques for higher density focal plane arrays and improved uniformity, and (3) fundamental studies of molecular beam epitaxy growth of III-V materials and hetero-interfaces to reduce defects and improve material performance.

 

References

Henry NC, et al: Surface conductivity of InAs/GaSb superlattice infrared detectors treated with thiolated Self Assembled Monolayers. Applied Physics Letters 108: 011606, 2016

Baril NF, et al: Optimization of thickness and doping of heterojunction unipolar barrier layer for dark current suppression in long wavelength strain layer superlattice infrared detectors. Applied Physics Letters 102: 013509, 2013

 

Keywords:
Semiconductor; Infrared; Photodiode; III-V; Surface chemistry; Molecular beam epitaxy; Passivation;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$75,000.00 $2,000.00

Experience Supplement:
Postdoctoral Associates will receive an appropriately higher stipend based on the number of years of experience past their PhD.

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