Opportunity at U.S. Army Research Office (ARO)
Wide-Bandgap Semiconductor Optoelectronics
US Army Research Office-NCSU
|Gerhold, Michael David
Currently we are pursuing superlattice growth in wide-bandgap semiconductors to be used in light emitters, such as for the generation of microcavity polaritons. This work is based on MOCVD (Metal Organic Chemical Vapor Deposition) of III-Nitride semiconductors. Epitaxy of quantum well heterostructures, distributed Bragg reflectors, and a variety of superlattice heterostructures are being studied. Additional, related work on semiconductor device processing, optical and material characterization, optical device simulation, and testing will be part of the project.
Gallium nitride; Distributed bragg reflector; Epitaxial growth; Polariton; Microcavity; Ultraviolet;
Open to U.S. citizens, permanent residents and non-U.S. citizens
Open to Postdoctoral and Senior applicants