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Opportunity at U.S. Army Research Office (ARO)

Wide-Bandgap Semiconductor Optoelectronics

Location

US Army Research Office-NCSU

RO# Location
14.03.00.B7339 Raleigh, NC

Advisers

Name E-mail Phone
Gerhold, Michael David michael.d.gerhold.civ@mail.mil 919.549.4357

Description

Currently we are pursuing superlattice growth in wide-bandgap semiconductors to be used in light emitters, such as for the generation of microcavity polaritons. This work is based on MOCVD (Metal Organic Chemical Vapor Deposition) of III-Nitride semiconductors. Epitaxy of quantum well heterostructures, distributed Bragg reflectors, and a variety of superlattice heterostructures are being studied. Additional, related work on semiconductor device processing, optical and material characterization, optical device simulation, and testing will be part of the project.

 

Keywords:
Gallium nitride; Distributed bragg reflector; Epitaxial growth; Polariton; Microcavity; Ultraviolet;

Eligibility

Citizenship:  Open to U.S. citizens, permanent residents and non-U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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