The National Academies Logo
Research Associateship Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies - AFRL

  Sign InPrintable View

Opportunity at Air Force Research Laboratory (AFRL)

Device-Limiting Point Defects in Advanced Electronic and Optical Materials

Location

Air Force Institute of Technology

RO# Location
13.50.00.B7459 Wright-Patterson AFB, OH 454337542

Advisers

Name E-mail Phone
Giles, Nancy C nancy.giles@afit.edu 937.255.3636, ex 4601

Description

Research opportunities exist within Air Force Institute of Technology ‘s Engineering Physics Department to develop and apply advanced materials characterization techniques including electron paramagnetic resonance, electron nuclear double resonance, photoluminescence, Raman, SEM, cathodoluminescence, infrared optical spectroscopy, and Hall effect measurements. We are interested in identifying and characterizing the point defects that affect the performance of optical and electrical devices. Small concentrations of point defects (ppm and lower) often significantly affect key performance metrics such as transparency of material to propagating intense laser beams, heat flow, charge flow, and free carrier absorption. Thus, being able to identify the responsible impurities or native defects (vacancies, antisites, interstitials), and also to determine their charge state is important information for crystal growers and device physicists. Materials of current interest include nonlinear optical ternary chalcopyrites (e.g., CdSiP2), orientation-patterned GaP (OPGAP), laser-host materials (LiYF4, ZnSe:Cr), scintillator materials (ZnO:Ga, CdWO4), and wide bandgap semiconductors (AIN, GaN, Ti02, ZnO). Future studies may include other ferroelectric and thermoelectric materials. Applicants should have demonstrated experience in either of the following: (1) optical and electrical characterization of semiconductors, and (2) materials synthesis techniques for inorganic crystals (powder, film, or bulk).

 

References

Giles NC, et al: Journal of Crystal Growth 312: 1133, 2010

Evans SM, et al: Journal of Applied Physics 103: 10/7, 2008

 

Keywords:
Point defects; Semiconductors; EPR; ENDOR; Optical materials; Scintillators; Nonlinear optical materials; Radiation detection materials; Wide-bandgap materials;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
Copyright © 2014. National Academy of Sciences. All rights reserved. 500 Fifth St. N.W., Washington, D.C. 20001.
Terms of Use and Privacy Statement.