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Opportunity at Air Force Research Laboratory (AFRL)

Device-Limiting Point Defects in Advanced Electronic and Optical Materials


Air Force Institute of Technology

RO# Location
13.50.00.B7459 Wright-Patterson AFB, OH 454337542


Name E-mail Phone
Giles, Nancy C 937.255.3636, ex 4601


Research opportunities exist within Air Force Institute of Technology ‘s Engineering Physics Department to develop and apply advanced materials characterization techniques including electron paramagnetic resonance, electron nuclear double resonance, photoluminescence, Raman, SEM, cathodoluminescence, infrared optical spectroscopy, and Hall effect measurements. We are interested in identifying and characterizing the point defects that affect the performance of optical and electrical devices. Small concentrations of point defects (ppm and lower) often significantly affect key performance metrics such as transparency of material to propagating intense laser beams, heat flow, charge flow, and free carrier absorption. Thus, being able to identify the responsible impurities or native defects (vacancies, antisites, interstitials), and also to determine their charge state is important information for crystal growers and device physicists. Materials of current interest include nonlinear optical ternary chalcopyrites (e.g., CdSiP2), orientation-patterned GaP (OPGAP), laser-host materials (LiYF4, ZnSe:Cr), scintillator materials (ZnO:Ga, CdWO4), and wide bandgap semiconductors (AIN, GaN, Ti02, ZnO). Future studies may include other ferroelectric and thermoelectric materials. Applicants should have demonstrated experience in either of the following: (1) optical and electrical characterization of semiconductors, and (2) materials synthesis techniques for inorganic crystals (powder, film, or bulk).



Giles NC, et al: Journal of Crystal Growth 312: 1133, 2010

Evans SM, et al: Journal of Applied Physics 103: 10/7, 2008


Point defects; Semiconductors; EPR; ENDOR; Optical materials; Scintillators; Nonlinear optical materials; Radiation detection materials; Wide-bandgap materials;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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